BC859C vs BC859BWT/R feature comparison

BC859C Philips Semiconductors

Buy Now Datasheet

BC859BWT/R NXP Semiconductors

Buy Now Datasheet
Rohs Code Yes Yes
Part Life Cycle Code Transferred Transferred
Ihs Manufacturer PHILIPS SEMICONDUCTORS NXP SEMICONDUCTORS
Reach Compliance Code unknown unknown
ECCN Code EAR99 EAR99
Collector Current-Max (IC) 0.1 A 0.1 A
Configuration SINGLE SINGLE
DC Current Gain-Min (hFE) 420 220
JESD-609 Code e3 e3
Number of Elements 1 1
Operating Temperature-Max 150 °C 150 °C
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type PNP PNP
Power Dissipation-Max (Abs) 0.3 W
Surface Mount YES YES
Terminal Finish MATTE TIN TIN
Transition Frequency-Nom (fT) 100 MHz 100 MHz
Base Number Matches 25 2
Part Package Code SC-70
Package Description SMALL OUTLINE, R-PDSO-G3
Pin Count 3
Additional Feature LOW NOISE
Collector-Base Capacitance-Max 5 pF
Collector-Emitter Voltage-Max 30 V
JESD-30 Code R-PDSO-G3
Number of Terminals 3
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Qualification Status Not Qualified
Terminal Form GULL WING
Terminal Position DUAL
Transistor Application AMPLIFIER
Transistor Element Material SILICON
VCEsat-Max 0.65 V

Compare BC859BWT/R with alternatives