BC859B
vs
BC859CW
feature comparison
All Stats
Differences Only
Rohs Code
Part Life Cycle Code
Active
Transferred
Ihs Manufacturer
NEXPERIA
SIEMENS A G
Reach Compliance Code
compliant
unknown
ECCN Code
EAR99
EAR99
Date Of Intro
1985-10-16
Additional Feature
LOW NOISE
LOW NOISE
Collector Current-Max (IC)
0.1 A
0.1 A
Collector-Emitter Voltage-Max
30 V
30 V
Configuration
SINGLE
SINGLE
DC Current Gain-Min (hFE)
220
420
JEDEC-95 Code
TO-236AB
JESD-30 Code
R-PDSO-G3
R-PDSO-G3
JESD-609 Code
e3
Moisture Sensitivity Level
1
Number of Elements
1
1
Number of Terminals
3
3
Operating Temperature-Max
150 °C
150 °C
Operating Temperature-Min
-65 °C
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Shape
RECTANGULAR
RECTANGULAR
Package Style
SMALL OUTLINE
SMALL OUTLINE
Peak Reflow Temperature (Cel)
260
Polarity/Channel Type
PNP
PNP
Reference Standard
AEC-Q101
Surface Mount
YES
YES
Terminal Finish
TIN
Terminal Form
GULL WING
GULL WING
Terminal Position
DUAL
DUAL
Time@Peak Reflow Temperature-Max (s)
30
Transistor Application
AMPLIFIER
SWITCHING
Transistor Element Material
SILICON
SILICON
Transition Frequency-Nom (fT)
100 MHz
250 MHz
Base Number Matches
28
8
Part Package Code
SC-70
Package Description
SOT-323, 3 PIN
Pin Count
3
Manufacturer Package Code
SOT323
HTS Code
8541.21.00.75
Power Dissipation Ambient-Max
0.25 W
Qualification Status
Not Qualified
VCEsat-Max
0.65 V
Compare BC859B with alternatives
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