BC859B
vs
BC859BWT/R
feature comparison
All Stats
Differences Only
Rohs Code
Part Life Cycle Code
Active
Transferred
Ihs Manufacturer
NEXPERIA
NXP SEMICONDUCTORS
Reach Compliance Code
compliant
unknown
ECCN Code
EAR99
EAR99
Date Of Intro
1985-10-16
Additional Feature
LOW NOISE
LOW NOISE
Collector Current-Max (IC)
0.1 A
0.1 A
Collector-Emitter Voltage-Max
30 V
30 V
Configuration
SINGLE
SINGLE
DC Current Gain-Min (hFE)
220
220
JEDEC-95 Code
TO-236AB
JESD-30 Code
R-PDSO-G3
R-PDSO-G3
JESD-609 Code
e3
e3
Moisture Sensitivity Level
1
Number of Elements
1
1
Number of Terminals
3
3
Operating Temperature-Max
150 °C
150 °C
Operating Temperature-Min
-65 °C
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Shape
RECTANGULAR
RECTANGULAR
Package Style
SMALL OUTLINE
SMALL OUTLINE
Peak Reflow Temperature (Cel)
260
Polarity/Channel Type
PNP
PNP
Reference Standard
AEC-Q101
Surface Mount
YES
YES
Terminal Finish
TIN
TIN
Terminal Form
GULL WING
GULL WING
Terminal Position
DUAL
DUAL
Time@Peak Reflow Temperature-Max (s)
30
Transistor Application
AMPLIFIER
AMPLIFIER
Transistor Element Material
SILICON
SILICON
Transition Frequency-Nom (fT)
100 MHz
100 MHz
Base Number Matches
28
2
Part Package Code
SC-70
Package Description
SMALL OUTLINE, R-PDSO-G3
Pin Count
3
Collector-Base Capacitance-Max
5 pF
Qualification Status
Not Qualified
VCEsat-Max
0.65 V
Compare BC859B with alternatives
Compare BC859BWT/R with alternatives