BC859AT/R
vs
BC859ATA
feature comparison
All Stats
Differences Only
Part Life Cycle Code
Obsolete
Obsolete
Ihs Manufacturer
NXP SEMICONDUCTORS
DIODES INC
Reach Compliance Code
compliant
unknown
ECCN Code
EAR99
EAR99
Additional Feature
LOW NOISE
LOW NOISE
Collector Current-Max (IC)
0.1 A
0.1 A
Collector-Emitter Voltage-Max
30 V
30 V
Configuration
SINGLE
SINGLE
DC Current Gain-Min (hFE)
125
125
JESD-30 Code
R-PDSO-G3
R-PDSO-G3
Number of Elements
1
1
Number of Terminals
3
3
Operating Temperature-Max
150 °C
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Shape
RECTANGULAR
RECTANGULAR
Package Style
SMALL OUTLINE
SMALL OUTLINE
Polarity/Channel Type
PNP
PNP
Power Dissipation-Max (Abs)
0.3 W
Qualification Status
Not Qualified
Not Qualified
Surface Mount
YES
YES
Terminal Form
GULL WING
GULL WING
Terminal Position
DUAL
DUAL
Transistor Application
AMPLIFIER
Transistor Element Material
SILICON
SILICON
Transition Frequency-Nom (fT)
100 MHz
300 MHz
VCEsat-Max
0.65 V
Base Number Matches
2
2
Package Description
SMALL OUTLINE, R-PDSO-G3
Compare BC859AT/R with alternatives
Compare BC859ATA with alternatives