BC859AT/R vs BC859ATA feature comparison

BC859AT/R NXP Semiconductors

Buy Now Datasheet

BC859ATA Diodes Incorporated

Buy Now Datasheet
Part Life Cycle Code Obsolete Obsolete
Ihs Manufacturer NXP SEMICONDUCTORS DIODES INC
Reach Compliance Code compliant unknown
ECCN Code EAR99 EAR99
Additional Feature LOW NOISE LOW NOISE
Collector Current-Max (IC) 0.1 A 0.1 A
Collector-Emitter Voltage-Max 30 V 30 V
Configuration SINGLE SINGLE
DC Current Gain-Min (hFE) 125 125
JESD-30 Code R-PDSO-G3 R-PDSO-G3
Number of Elements 1 1
Number of Terminals 3 3
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Polarity/Channel Type PNP PNP
Power Dissipation-Max (Abs) 0.3 W
Qualification Status Not Qualified Not Qualified
Surface Mount YES YES
Terminal Form GULL WING GULL WING
Terminal Position DUAL DUAL
Transistor Application AMPLIFIER
Transistor Element Material SILICON SILICON
Transition Frequency-Nom (fT) 100 MHz 300 MHz
VCEsat-Max 0.65 V
Base Number Matches 2 2
Package Description SMALL OUTLINE, R-PDSO-G3

Compare BC859AT/R with alternatives

Compare BC859ATA with alternatives