BC859A
vs
BC858A-R2-10001
feature comparison
All Stats
Differences Only
Part Life Cycle Code
Transferred
Active
Ihs Manufacturer
PLESSEY SEMICONDUCTORS DISCRETE COMPONENTS DIV
PAN JIT INTERNATIONAL INC
Reach Compliance Code
unknown
compliant
ECCN Code
EAR99
EAR99
Base Number Matches
22
1
Package Description
,
Collector Current-Max (IC)
0.1 A
Collector-Base Capacitance-Max
4.5 pF
Collector-Emitter Voltage-Max
30 V
Configuration
SINGLE
DC Current Gain-Min (hFE)
110
JESD-30 Code
R-PDSO-G3
Number of Elements
1
Number of Terminals
3
Operating Temperature-Max
150 °C
Operating Temperature-Min
-50 °C
Package Body Material
PLASTIC/EPOXY
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE
Polarity/Channel Type
PNP
Power Dissipation-Max (Abs)
0.33 W
Surface Mount
YES
Terminal Form
GULL WING
Terminal Position
DUAL
Transistor Application
AMPLIFIER
Transistor Element Material
SILICON
Transition Frequency-Nom (fT)
200 MHz
VCEsat-Max
0.65 V
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