BC858TR13
vs
BC858BWE6327
feature comparison
All Stats
Differences Only
Pbfree Code
Rohs Code
Part Life Cycle Code
Active
Active
Ihs Manufacturer
CENTRAL SEMICONDUCTOR CORP
ROCHESTER ELECTRONICS LLC
Reach Compliance Code
not_compliant
unknown
ECCN Code
EAR99
Additional Feature
LOW NOISE
Collector-Base Capacitance-Max
4.5 pF
Collector-Emitter Voltage-Max
30 V
30 V
Configuration
SINGLE
SINGLE
DC Current Gain-Min (hFE)
75
220
JESD-30 Code
R-PDSO-G3
R-PDSO-G3
JESD-609 Code
e0
e3
Number of Elements
1
1
Number of Terminals
3
3
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Shape
RECTANGULAR
RECTANGULAR
Package Style
SMALL OUTLINE
SMALL OUTLINE
Polarity/Channel Type
PNP
PNP
Qualification Status
Not Qualified
COMMERCIAL
Surface Mount
YES
YES
Terminal Finish
TIN LEAD
MATTE TIN
Terminal Form
GULL WING
GULL WING
Terminal Position
DUAL
DUAL
Transistor Element Material
SILICON
SILICON
Transition Frequency-Nom (fT)
150 MHz
250 MHz
VCEsat-Max
0.65 V
Base Number Matches
1
3
Collector Current-Max (IC)
0.1 A
Moisture Sensitivity Level
NOT SPECIFIED
Peak Reflow Temperature (Cel)
260
Time@Peak Reflow Temperature-Max (s)
40
Transistor Application
SWITCHING
Compare BC858TR13 with alternatives
Compare BC858BWE6327 with alternatives