BC858BWE6327
vs
BC858BTR
feature comparison
All Stats
Differences Only
Part Life Cycle Code
Transferred
Active
Ihs Manufacturer
SIEMENS A G
CENTRAL SEMICONDUCTOR CORP
Package Description
SMALL OUTLINE, R-PDSO-G3
PLASTIC PACKAGE-3
Reach Compliance Code
unknown
not_compliant
ECCN Code
EAR99
EAR99
HTS Code
8541.21.00.75
Collector Current-Max (IC)
0.1 A
0.1 A
Collector-Emitter Voltage-Max
30 V
30 V
Configuration
SINGLE
SINGLE
DC Current Gain-Min (hFE)
220
220
JESD-30 Code
R-PDSO-G3
R-PDSO-G3
Number of Elements
1
1
Number of Terminals
3
3
Operating Temperature-Max
150 °C
150 °C
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Shape
RECTANGULAR
RECTANGULAR
Package Style
SMALL OUTLINE
SMALL OUTLINE
Polarity/Channel Type
PNP
PNP
Power Dissipation Ambient-Max
0.25 W
Qualification Status
Not Qualified
Not Qualified
Surface Mount
YES
YES
Terminal Form
GULL WING
GULL WING
Terminal Position
DUAL
DUAL
Transistor Application
SWITCHING
SWITCHING
Transistor Element Material
SILICON
SILICON
Transition Frequency-Nom (fT)
250 MHz
100 MHz
VCEsat-Max
0.65 V
0.65 V
Base Number Matches
3
1
Pbfree Code
No
Rohs Code
No
Pin Count
3
Additional Feature
LOW NOISE
Collector-Base Capacitance-Max
4.5 pF
JESD-609 Code
e0
Power Dissipation-Max (Abs)
0.35 W
Terminal Finish
TIN LEAD
Compare BC858BWE6327 with alternatives
Compare BC858BTR with alternatives