BC856BWR
vs
NST856BF3T5G
feature comparison
| Pbfree Code |
No
|
Yes
|
| Rohs Code |
No
|
|
| Part Life Cycle Code |
Active
|
Obsolete
|
| Ihs Manufacturer |
CENTRAL SEMICONDUCTOR CORP
|
ONSEMI
|
| Package Description |
SMALL OUTLINE, R-PDSO-G3
|
LEAD FREE, CASE 524AA-01, 3 PIN
|
| Pin Count |
6
|
3
|
| Reach Compliance Code |
not_compliant
|
compliant
|
| ECCN Code |
EAR99
|
EAR99
|
| HTS Code |
8541.21.00.75
|
|
| Collector Current-Max (IC) |
0.1 A
|
0.1 A
|
| Collector-Base Capacitance-Max |
4.5 pF
|
|
| Collector-Emitter Voltage-Max |
65 V
|
65 V
|
| Configuration |
SINGLE
|
SINGLE
|
| DC Current Gain-Min (hFE) |
200
|
220
|
| JESD-30 Code |
R-PDSO-G3
|
R-PDSO-F3
|
| JESD-609 Code |
e0
|
e3
|
| Number of Elements |
1
|
1
|
| Number of Terminals |
3
|
3
|
| Operating Temperature-Max |
150 °C
|
150 °C
|
| Operating Temperature-Min |
-65 °C
|
|
| Package Body Material |
PLASTIC/EPOXY
|
PLASTIC/EPOXY
|
| Package Shape |
RECTANGULAR
|
RECTANGULAR
|
| Package Style |
SMALL OUTLINE
|
SMALL OUTLINE
|
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED
|
260
|
| Polarity/Channel Type |
PNP
|
PNP
|
| Power Dissipation Ambient-Max |
0.25 W
|
|
| Power Dissipation-Max (Abs) |
0.25 W
|
0.347 W
|
| Qualification Status |
Not Qualified
|
Not Qualified
|
| Surface Mount |
YES
|
YES
|
| Terminal Finish |
Tin/Lead (Sn/Pb)
|
MATTE TIN
|
| Terminal Form |
GULL WING
|
FLAT
|
| Terminal Position |
DUAL
|
DUAL
|
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED
|
30
|
| Transistor Application |
SWITCHING
|
AMPLIFIER
|
| Transistor Element Material |
SILICON
|
SILICON
|
| Transition Frequency-Nom (fT) |
200 MHz
|
100 MHz
|
| VCEsat-Max |
0.65 V
|
|
| Base Number Matches |
1
|
1
|
| Part Package Code |
|
SOT-1123, 1.0x0.6x0.37, 0.35P
|
| Manufacturer Package Code |
|
524AA
|
| Factory Lead Time |
|
4 Weeks
|
| Samacsys Manufacturer |
|
onsemi
|
| Moisture Sensitivity Level |
|
1
|
|
|
|
Compare BC856BWR with alternatives
Compare NST856BF3T5G with alternatives