BC850BTR vs BC850C feature comparison

BC850BTR Central Semiconductor Corp

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BC850C Infineon Technologies AG

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Pbfree Code No Yes
Rohs Code No Yes
Part Life Cycle Code Active Active
Ihs Manufacturer CENTRAL SEMICONDUCTOR CORP INFINEON TECHNOLOGIES AG
Reach Compliance Code not_compliant compliant
ECCN Code EAR99
Additional Feature LOW NOISE LOW NOISE
Collector-Base Capacitance-Max 2.5 pF
Collector-Emitter Voltage-Max 50 V 45 V
Configuration SINGLE SINGLE
DC Current Gain-Min (hFE) 200 420
JESD-30 Code R-PDSO-G3 R-PDSO-G3
JESD-609 Code e0 e3
Number of Elements 1 1
Number of Terminals 3 3
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Polarity/Channel Type NPN NPN
Qualification Status Not Qualified Not Qualified
Surface Mount YES YES
Terminal Finish TIN LEAD MATTE TIN
Terminal Form GULL WING GULL WING
Terminal Position DUAL DUAL
Transistor Element Material SILICON SILICON
Transition Frequency-Nom (fT) 300 MHz 250 MHz
VCEsat-Max 0.6 V
Base Number Matches 2 11
Package Description SMALL OUTLINE, R-PDSO-G3
Pin Count 3
Samacsys Manufacturer Infineon
Collector Current-Max (IC) 0.1 A
Moisture Sensitivity Level 1
Operating Temperature-Max 150 °C
Peak Reflow Temperature (Cel) 260
Power Dissipation-Max (Abs) 0.3 W
Time@Peak Reflow Temperature-Max (s) 40
Transistor Application AMPLIFIER

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