BC848BTR
vs
BC848BTIN/LEAD
feature comparison
Pbfree Code |
No
|
|
Rohs Code |
No
|
No
|
Part Life Cycle Code |
Active
|
Active
|
Ihs Manufacturer |
CENTRAL SEMICONDUCTOR CORP
|
CENTRAL SEMICONDUCTOR CORP
|
Reach Compliance Code |
not_compliant
|
not_compliant
|
ECCN Code |
EAR99
|
EAR99
|
Additional Feature |
LOW NOISE
|
|
Collector Current-Max (IC) |
0.1 A
|
0.1 A
|
Collector-Base Capacitance-Max |
2.5 pF
|
4.5 pF
|
Collector-Emitter Voltage-Max |
30 V
|
30 V
|
Configuration |
SINGLE
|
SINGLE
|
DC Current Gain-Min (hFE) |
200
|
200
|
JESD-30 Code |
R-PDSO-G3
|
R-PDSO-G3
|
JESD-609 Code |
e0
|
e0
|
Number of Elements |
1
|
1
|
Number of Terminals |
3
|
3
|
Operating Temperature-Max |
150 °C
|
150 °C
|
Package Body Material |
PLASTIC/EPOXY
|
PLASTIC/EPOXY
|
Package Shape |
RECTANGULAR
|
RECTANGULAR
|
Package Style |
SMALL OUTLINE
|
SMALL OUTLINE
|
Polarity/Channel Type |
NPN
|
NPN
|
Power Dissipation-Max (Abs) |
0.35 W
|
0.33 W
|
Qualification Status |
Not Qualified
|
|
Surface Mount |
YES
|
YES
|
Terminal Finish |
TIN LEAD
|
TIN LEAD
|
Terminal Form |
GULL WING
|
GULL WING
|
Terminal Position |
DUAL
|
DUAL
|
Transistor Element Material |
SILICON
|
SILICON
|
Transition Frequency-Nom (fT) |
300 MHz
|
|
VCEsat-Max |
0.6 V
|
0.6 V
|
Base Number Matches |
1
|
1
|
Package Description |
|
,
|
HTS Code |
|
8541.21.00.95
|
Date Of Intro |
|
2018-01-18
|
Operating Temperature-Min |
|
-55 °C
|
Power Dissipation Ambient-Max |
|
0.33 W
|
Transistor Application |
|
SWITCHING
|
|
|
|
Compare BC848BTR with alternatives
Compare BC848BTIN/LEAD with alternatives