BC847BPDW1T1G
vs
BC847BPDW1T2G
feature comparison
Pbfree Code |
Yes
|
Yes
|
Part Life Cycle Code |
Active
|
Active
|
Ihs Manufacturer |
ONSEMI
|
ONSEMI
|
Part Package Code |
SC-88/SC70-6/SOT-363 6 LEAD
|
SC-88/SC70-6/SOT-363 6 LEAD
|
Package Description |
SC-70, SC-88, 6 PIN
|
SC-70, SC-88, 6 PIN
|
Pin Count |
6
|
6
|
Manufacturer Package Code |
419B-02
|
419B-02
|
Reach Compliance Code |
compliant
|
compliant
|
ECCN Code |
EAR99
|
EAR99
|
Factory Lead Time |
4 Weeks
|
12 Weeks
|
Samacsys Manufacturer |
onsemi
|
onsemi
|
Collector Current-Max (IC) |
0.1 A
|
0.1 A
|
Collector-Base Capacitance-Max |
4.5 pF
|
4.5 pF
|
Collector-Emitter Voltage-Max |
45 V
|
45 V
|
Configuration |
SEPARATE, 2 ELEMENTS
|
SEPARATE, 2 ELEMENTS
|
DC Current Gain-Min (hFE) |
200
|
200
|
JESD-30 Code |
R-PDSO-G6
|
R-PDSO-G6
|
JESD-609 Code |
e3
|
e3
|
Moisture Sensitivity Level |
1
|
1
|
Number of Elements |
2
|
2
|
Number of Terminals |
6
|
6
|
Operating Temperature-Max |
150 °C
|
150 °C
|
Operating Temperature-Min |
-55 °C
|
-55 °C
|
Package Body Material |
PLASTIC/EPOXY
|
PLASTIC/EPOXY
|
Package Shape |
RECTANGULAR
|
RECTANGULAR
|
Package Style |
SMALL OUTLINE
|
SMALL OUTLINE
|
Peak Reflow Temperature (Cel) |
260
|
260
|
Polarity/Channel Type |
NPN AND PNP
|
NPN AND PNP
|
Power Dissipation-Max (Abs) |
0.38 W
|
0.38 W
|
Qualification Status |
Not Qualified
|
Not Qualified
|
Surface Mount |
YES
|
YES
|
Terminal Finish |
Matte Tin (Sn) - annealed
|
Matte Tin (Sn) - annealed
|
Terminal Form |
GULL WING
|
GULL WING
|
Terminal Position |
DUAL
|
DUAL
|
Time@Peak Reflow Temperature-Max (s) |
30
|
30
|
Transistor Application |
AMPLIFIER
|
AMPLIFIER
|
Transistor Element Material |
SILICON
|
SILICON
|
Transition Frequency-Nom (fT) |
100 MHz
|
100 MHz
|
VCEsat-Max |
0.65 V
|
0.65 V
|
Base Number Matches |
1
|
1
|
|
|
|
Compare BC847BPDW1T1G with alternatives
Compare BC847BPDW1T2G with alternatives