BC817-25W
vs
BC817-16W-TAPE-7
feature comparison
All Stats
Differences Only
Part Life Cycle Code
Transferred
Obsolete
Ihs Manufacturer
SIEMENS A G
NXP SEMICONDUCTORS
Reach Compliance Code
unknown
unknown
ECCN Code
EAR99
EAR99
HTS Code
8541.21.00.75
Collector Current-Max (IC)
0.5 A
0.5 A
Collector-Emitter Voltage-Max
45 V
45 V
Configuration
SINGLE
SINGLE
DC Current Gain-Min (hFE)
100
40
JESD-30 Code
R-PDSO-G3
R-PDSO-G3
Number of Elements
1
1
Number of Terminals
3
3
Operating Temperature-Max
150 °C
150 °C
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Shape
RECTANGULAR
RECTANGULAR
Package Style
SMALL OUTLINE
SMALL OUTLINE
Polarity/Channel Type
NPN
NPN
Power Dissipation Ambient-Max
0.25 W
Qualification Status
Not Qualified
Not Qualified
Surface Mount
YES
YES
Terminal Form
GULL WING
GULL WING
Terminal Position
DUAL
DUAL
Transistor Application
AMPLIFIER
Transistor Element Material
SILICON
SILICON
Transition Frequency-Nom (fT)
170 MHz
200 MHz
VCEsat-Max
0.7 V
0.7 V
Base Number Matches
3
1
Package Description
SMALL OUTLINE, R-PDSO-G3
Collector-Base Capacitance-Max
5 pF
Compare BC817-25W with alternatives
Compare BC817-16W-TAPE-7 with alternatives