BC635T/R
vs
BC635-AMMO
feature comparison
| Rohs Code |
Yes
|
|
| Part Life Cycle Code |
Transferred
|
Obsolete
|
| Ihs Manufacturer |
PHILIPS SEMICONDUCTORS
|
NXP SEMICONDUCTORS
|
| Reach Compliance Code |
unknown
|
unknown
|
| ECCN Code |
EAR99
|
EAR99
|
| Collector Current-Max (IC) |
1 A
|
1 A
|
| Configuration |
SINGLE
|
SINGLE
|
| DC Current Gain-Min (hFE) |
40
|
25
|
| JESD-609 Code |
e3
|
|
| Number of Elements |
1
|
1
|
| Operating Temperature-Max |
150 °C
|
150 °C
|
| Polarity/Channel Type |
NPN
|
NPN
|
| Power Dissipation-Max (Abs) |
0.8 W
|
|
| Surface Mount |
NO
|
NO
|
| Terminal Finish |
Matte Tin (Sn)
|
|
| Base Number Matches |
2
|
1
|
| Package Description |
|
CYLINDRICAL, O-PBCY-T3
|
| Collector-Emitter Voltage-Max |
|
45 V
|
| JEDEC-95 Code |
|
TO-92
|
| JESD-30 Code |
|
O-PBCY-T3
|
| Number of Terminals |
|
3
|
| Package Body Material |
|
PLASTIC/EPOXY
|
| Package Shape |
|
ROUND
|
| Package Style |
|
CYLINDRICAL
|
| Qualification Status |
|
Not Qualified
|
| Terminal Form |
|
THROUGH-HOLE
|
| Terminal Position |
|
BOTTOM
|
| Transistor Element Material |
|
SILICON
|
| Transition Frequency-Nom (fT) |
|
130 MHz
|
| VCEsat-Max |
|
0.5 V
|
|
|
|
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