BBY40-T
vs
BB439
feature comparison
| Pbfree Code |
Yes
|
|
| Rohs Code |
Yes
|
No
|
| Part Life Cycle Code |
Obsolete
|
Transferred
|
| Ihs Manufacturer |
NXP SEMICONDUCTORS
|
SIEMENS A G
|
| Package Description |
R-PDSO-G3
|
R-PDSO-G2
|
| Reach Compliance Code |
unknown
|
unknown
|
| ECCN Code |
EAR99
|
EAR99
|
| HTS Code |
8541.10.00.80
|
8541.10.00.80
|
| Breakdown Voltage-Min |
30 V
|
30 V
|
| Configuration |
SINGLE
|
SINGLE
|
| Diode Capacitance Ratio-Min |
5
|
5
|
| Diode Capacitance-Nom |
26 pF
|
29 pF
|
| Diode Element Material |
SILICON
|
SILICON
|
| Diode Type |
VARIABLE CAPACITANCE DIODE
|
VARIABLE CAPACITANCE DIODE
|
| Frequency Band |
VERY HIGH FREQUENCY
|
VERY HIGH FREQUENCY
|
| JESD-30 Code |
R-PDSO-G3
|
R-PDSO-G2
|
| JESD-609 Code |
e3
|
e0
|
| Moisture Sensitivity Level |
1
|
|
| Number of Elements |
1
|
1
|
| Number of Terminals |
3
|
2
|
| Operating Temperature-Max |
125 °C
|
|
| Operating Temperature-Min |
-55 °C
|
|
| Package Body Material |
PLASTIC/EPOXY
|
PLASTIC/EPOXY
|
| Package Shape |
RECTANGULAR
|
RECTANGULAR
|
| Package Style |
SMALL OUTLINE
|
SMALL OUTLINE
|
| Peak Reflow Temperature (Cel) |
260
|
|
| Qualification Status |
Not Qualified
|
Not Qualified
|
| Reverse Current-Max |
0.01 µA
|
0.02 µA
|
| Reverse Test Voltage |
28 V
|
28 V
|
| Surface Mount |
YES
|
YES
|
| Terminal Finish |
TIN
|
Tin/Lead (Sn/Pb)
|
| Terminal Form |
GULL WING
|
GULL WING
|
| Terminal Position |
DUAL
|
DUAL
|
| Time@Peak Reflow Temperature-Max (s) |
30
|
|
| Variable Capacitance Diode Classification |
ABRUPT
|
|
| Base Number Matches |
1
|
2
|
| Quality Factor-Min |
|
280
|
| Rep Pk Reverse Voltage-Max |
|
28 V
|
|
|
|
Compare BBY40-T with alternatives
Compare BB439 with alternatives