BBY31-T vs BBY31,215 feature comparison

BBY31-T NXP Semiconductors

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BBY31,215 NXP Semiconductors

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Part Life Cycle Code Obsolete Obsolete
Ihs Manufacturer NXP SEMICONDUCTORS NXP SEMICONDUCTORS
Package Description R-PDSO-G3 R-PDSO-G3
Reach Compliance Code unknown unknown
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.80 8541.10.00.80
Breakdown Voltage-Min 30 V 30 V
Configuration SINGLE SINGLE
Diode Cap Tolerance 11.11% 11.11%
Diode Capacitance-Nom 16.5 pF 16.5 pF
Diode Element Material SILICON SILICON
Diode Type VARIABLE CAPACITANCE DIODE VARIABLE CAPACITANCE DIODE
Frequency Band ULTRA HIGH FREQUENCY ULTRA HIGH FREQUENCY
JESD-30 Code R-PDSO-G3 R-PDSO-G3
Number of Elements 1 1
Number of Terminals 3 3
Operating Temperature-Max 85 °C 125 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Qualification Status Not Qualified Not Qualified
Reverse Current-Max 0.01 µA 0.01 µA
Reverse Test Voltage 28 V 28 V
Surface Mount YES YES
Terminal Form GULL WING GULL WING
Terminal Position DUAL DUAL
Variable Capacitance Diode Classification ABRUPT ABRUPT
Base Number Matches 1 1
Pin Count 3
JESD-609 Code e3
Operating Temperature-Min -55 °C
Peak Reflow Temperature (Cel) NOT SPECIFIED
Terminal Finish TIN
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED

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