BB833
vs
BBY31TRL13
feature comparison
| Rohs Code |
No
|
|
| Part Life Cycle Code |
Transferred
|
Obsolete
|
| Ihs Manufacturer |
SIEMENS A G
|
NXP SEMICONDUCTORS
|
| Package Description |
R-PDSO-G2
|
R-PDSO-G3
|
| Reach Compliance Code |
unknown
|
unknown
|
| ECCN Code |
EAR99
|
EAR99
|
| HTS Code |
8541.10.00.80
|
8541.10.00.80
|
| Breakdown Voltage-Min |
30 V
|
|
| Configuration |
SINGLE
|
SINGLE
|
| Diode Capacitance Ratio-Min |
11
|
|
| Diode Capacitance-Nom |
9.3 pF
|
1.03 pF
|
| Diode Element Material |
SILICON
|
SILICON
|
| Diode Type |
VARIABLE CAPACITANCE DIODE
|
VARIABLE CAPACITANCE DIODE
|
| Frequency Band |
S BAND
|
ULTRA HIGH FREQUENCY
|
| JESD-30 Code |
R-PDSO-G2
|
R-PDSO-G3
|
| JESD-609 Code |
e0
|
|
| Number of Elements |
1
|
1
|
| Number of Terminals |
2
|
3
|
| Package Body Material |
PLASTIC/EPOXY
|
PLASTIC/EPOXY
|
| Package Shape |
RECTANGULAR
|
RECTANGULAR
|
| Package Style |
SMALL OUTLINE
|
SMALL OUTLINE
|
| Qualification Status |
Not Qualified
|
Not Qualified
|
| Rep Pk Reverse Voltage-Max |
30 V
|
|
| Reverse Current-Max |
0.02 µA
|
|
| Reverse Test Voltage |
30 V
|
|
| Surface Mount |
YES
|
YES
|
| Terminal Finish |
Tin/Lead (Sn/Pb)
|
|
| Terminal Form |
GULL WING
|
GULL WING
|
| Terminal Position |
DUAL
|
DUAL
|
| Base Number Matches |
2
|
2
|
| Variable Capacitance Diode Classification |
|
ABRUPT
|
|
|
|
Compare BB833 with alternatives
Compare BBY31TRL13 with alternatives