BB804Y215
vs
BB804
feature comparison
Part Life Cycle Code |
Obsolete
|
Transferred
|
Ihs Manufacturer |
NXP SEMICONDUCTORS
|
TEMIC SEMICONDUCTORS
|
Package Description |
R-PDSO-G3
|
|
Reach Compliance Code |
unknown
|
unknown
|
ECCN Code |
EAR99
|
|
HTS Code |
8541.10.00.80
|
|
Breakdown Voltage-Min |
18 V
|
18 V
|
Configuration |
COMMON CATHODE, 2 ELEMENTS
|
COMMON CATHODE, 2 ELEMENTS
|
Diode Capacitance Ratio-Min |
1.65
|
1.65
|
Diode Capacitance-Nom |
42.75 pF
|
42 pF
|
Diode Element Material |
SILICON
|
SILICON
|
Diode Type |
VARIABLE CAPACITANCE DIODE
|
VARIABLE CAPACITANCE DIODE
|
Frequency Band |
VERY HIGH FREQUENCY
|
|
JESD-30 Code |
R-PDSO-G3
|
R-PDSO-G3
|
Number of Elements |
2
|
2
|
Number of Terminals |
3
|
3
|
Operating Temperature-Max |
125 °C
|
|
Operating Temperature-Min |
-55 °C
|
|
Package Body Material |
PLASTIC/EPOXY
|
PLASTIC/EPOXY
|
Package Shape |
RECTANGULAR
|
RECTANGULAR
|
Package Style |
SMALL OUTLINE
|
SMALL OUTLINE
|
Power Dissipation-Max |
0.25 W
|
|
Qualification Status |
Not Qualified
|
Not Qualified
|
Reverse Current-Max |
0.02 µA
|
|
Reverse Test Voltage |
16 V
|
|
Surface Mount |
YES
|
YES
|
Terminal Form |
GULL WING
|
GULL WING
|
Terminal Position |
DUAL
|
DUAL
|
Variable Capacitance Diode Classification |
ABRUPT
|
|
Base Number Matches |
1
|
10
|
JEDEC-95 Code |
|
TO-236
|
Quality Factor-Min |
|
100
|
|
|
|
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