BB804
vs
BB804Y215
feature comparison
All Stats
Differences Only
Part Life Cycle Code
Transferred
Obsolete
Ihs Manufacturer
TEMIC SEMICONDUCTORS
NXP SEMICONDUCTORS
Reach Compliance Code
unknown
unknown
Breakdown Voltage-Min
18 V
18 V
Configuration
COMMON CATHODE, 2 ELEMENTS
COMMON CATHODE, 2 ELEMENTS
Diode Capacitance Ratio-Min
1.65
1.65
Diode Capacitance-Nom
42 pF
42.75 pF
Diode Element Material
SILICON
SILICON
Diode Type
VARIABLE CAPACITANCE DIODE
VARIABLE CAPACITANCE DIODE
JEDEC-95 Code
TO-236
JESD-30 Code
R-PDSO-G3
R-PDSO-G3
Number of Elements
2
2
Number of Terminals
3
3
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Shape
RECTANGULAR
RECTANGULAR
Package Style
SMALL OUTLINE
SMALL OUTLINE
Qualification Status
Not Qualified
Not Qualified
Quality Factor-Min
100
Surface Mount
YES
YES
Terminal Form
GULL WING
GULL WING
Terminal Position
DUAL
DUAL
Base Number Matches
10
1
Package Description
R-PDSO-G3
ECCN Code
EAR99
HTS Code
8541.10.00.80
Frequency Band
VERY HIGH FREQUENCY
Operating Temperature-Max
125 °C
Operating Temperature-Min
-55 °C
Power Dissipation-Max
0.25 W
Reverse Current-Max
0.02 µA
Reverse Test Voltage
16 V
Variable Capacitance Diode Classification
ABRUPT
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