BB215TRL
vs
BBY51-03WE6433
feature comparison
All Stats
Differences Only
Part Life Cycle Code
Obsolete
Transferred
Ihs Manufacturer
NXP SEMICONDUCTORS
SIEMENS A G
Package Description
O-LELF-R2
R-PDSO-G2
Reach Compliance Code
unknown
unknown
ECCN Code
EAR99
EAR99
HTS Code
8541.10.00.80
8541.10.00.80
Additional Feature
3% MATCHED SETS ARE AVAILABLE
Case Connection
ISOLATED
Configuration
SINGLE
SINGLE
Diode Capacitance Ratio-Min
7.6
1.55
Diode Capacitance-Nom
2 pF
5.3 pF
Diode Element Material
SILICON
SILICON
Diode Type
VARIABLE CAPACITANCE DIODE
VARIABLE CAPACITANCE DIODE
Frequency Band
ULTRA HIGH FREQUENCY
JESD-30 Code
O-LELF-R2
R-PDSO-G2
Number of Elements
1
1
Number of Terminals
2
2
Package Body Material
GLASS
PLASTIC/EPOXY
Package Shape
ROUND
RECTANGULAR
Package Style
LONG FORM
SMALL OUTLINE
Qualification Status
Not Qualified
Not Qualified
Surface Mount
YES
YES
Terminal Form
WRAP AROUND
GULL WING
Terminal Position
END
DUAL
Variable Capacitance Diode Classification
ABRUPT
HYPERABRUPT
Base Number Matches
2
2
Breakdown Voltage-Min
7 V
Operating Temperature-Max
150 °C
Operating Temperature-Min
-55 °C
Reverse Current-Max
0.01 µA
Reverse Test Voltage
6 V
Compare BB215TRL with alternatives
Compare BBY51-03WE6433 with alternatives