BB201,215 vs 1SV225 feature comparison

BB201,215 NXP Semiconductors

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1SV225 Toshiba America Electronic Components

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Rohs Code Yes No
Part Life Cycle Code End Of Life Obsolete
Ihs Manufacturer NXP SEMICONDUCTORS TOSHIBA CORP
Part Package Code TO-236 SC-59
Package Description PLASTIC PACKAGE-3 R-PDSO-G3
Pin Count 3 3
Manufacturer Package Code SOT23
Reach Compliance Code compliant unknown
ECCN Code EAR99
HTS Code 8541.10.00
Factory Lead Time 4 Weeks
Samacsys Manufacturer NXP
Configuration COMMON CATHODE, 2 ELEMENTS COMMON CATHODE, 2 ELEMENTS
Diode Cap Tolerance 6.81% 6.33%
Diode Capacitance Ratio-Min 3.1 2.6
Diode Capacitance-Nom 95 pF 19.7 pF
Diode Element Material SILICON SILICON
Diode Type VARIABLE CAPACITANCE DIODE VARIABLE CAPACITANCE DIODE
JEDEC-95 Code TO-236AB
JESD-30 Code R-PDSO-G3 R-PDSO-G3
JESD-609 Code e3 e0
Moisture Sensitivity Level 1
Number of Elements 2 2
Number of Terminals 3 3
Operating Temperature-Max 125 °C 125 °C
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Qualification Status Not Qualified Not Qualified
Rep Pk Reverse Voltage-Max 15 V 32 V
Surface Mount YES YES
Terminal Finish Tin (Sn) Tin/Lead (Sn/Pb)
Terminal Form GULL WING GULL WING
Terminal Position DUAL DUAL
Time@Peak Reflow Temperature-Max (s) 30
Variable Capacitance Diode Classification ABRUPT ABRUPT
Base Number Matches 1 1
Pbfree Code No
Breakdown Voltage-Min 32 V
Reverse Current-Max 5e-8 µA
Reverse Test Voltage 30 V

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