BB151,115 vs 1SV306 feature comparison

BB151,115 NXP Semiconductors

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1SV306 Toshiba America Electronic Components

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Part Life Cycle Code Obsolete Active
Ihs Manufacturer NXP SEMICONDUCTORS TOSHIBA CORP
Part Package Code SC-76 SOD
Package Description R-PDSO-G2 R-PDSO-G4
Pin Count 2 4
Reach Compliance Code unknown unknown
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.80 8541.10.00.80
Configuration SINGLE SEPARATE, 2 ELEMENTS
Diode Capacitance Ratio-Min 1.45 2
Diode Capacitance-Nom 19.1 pF 15 pF
Diode Element Material SILICON SILICON
Diode Type VARIABLE CAPACITANCE DIODE VARIABLE CAPACITANCE DIODE
JESD-30 Code R-PDSO-G2 R-PDSO-G4
JESD-609 Code e3 e0
Number of Elements 1 2
Number of Terminals 2 4
Operating Temperature-Max 150 °C 125 °C
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Qualification Status Not Qualified Not Qualified
Surface Mount YES YES
Terminal Finish TIN TIN LEAD
Terminal Form GULL WING GULL WING
Terminal Position DUAL DUAL
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Variable Capacitance Diode Classification ABRUPT ABRUPT
Base Number Matches 1 1
Pbfree Code No
Rohs Code No
Breakdown Voltage-Min 15 V
Diode Cap Tolerance 6.67%
Frequency Band ULTRA HIGH FREQUENCY
Rep Pk Reverse Voltage-Max 15 V
Reverse Current-Max 0.003 µA
Reverse Test Voltage 15 V

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