BAW56W,115 vs BAW56W-G feature comparison

BAW56W,115 NXP Semiconductors

Buy Now Datasheet

BAW56W-G Sangdest Microelectronics (Nanjing) Co Ltd

Buy Now Datasheet
Rohs Code Yes Yes
Part Life Cycle Code Transferred Obsolete
Ihs Manufacturer NXP SEMICONDUCTORS SANGDEST MICROELECTRONICS (NANJING) CO LTD
Part Package Code SC-70
Package Description PLASTIC, SMD, SC-70, 3 PIN R-PDSO-G3
Pin Count 3
Manufacturer Package Code SOT323
Reach Compliance Code compliant unknown
ECCN Code EAR99
HTS Code 8541.10.00.70
Factory Lead Time 4 Weeks
Samacsys Manufacturer NXP
Configuration COMMON ANODE, 2 ELEMENTS COMMON ANODE, 2 ELEMENTS
Diode Element Material SILICON SILICON
Diode Type RECTIFIER DIODE RECTIFIER DIODE
Forward Voltage-Max (VF) 1.25 V
JESD-30 Code R-PDSO-G3 R-PDSO-G3
JESD-609 Code e3
Moisture Sensitivity Level 1
Non-rep Pk Forward Current-Max 4 A
Number of Elements 2 2
Number of Terminals 3 3
Operating Temperature-Max 150 °C
Output Current-Max 0.15 A 0.15 A
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Cel) 260 NOT SPECIFIED
Power Dissipation-Max 0.2 W 0.2 W
Qualification Status Not Qualified Not Qualified
Rep Pk Reverse Voltage-Max 90 V 75 V
Reverse Current-Max 1 µA
Reverse Recovery Time-Max 0.004 µs 0.006 µs
Surface Mount YES YES
Terminal Finish TIN
Terminal Form GULL WING GULL WING
Terminal Position DUAL DUAL
Time@Peak Reflow Temperature-Max (s) 30 NOT SPECIFIED
Base Number Matches 2 4
Application GENERAL PURPOSE

Compare BAW56W,115 with alternatives

Compare BAW56W-G with alternatives