BAW56T116 vs BAW56E6327XT feature comparison

BAW56T116 ROHM Semiconductor

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BAW56E6327XT Infineon Technologies AG

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Pbfree Code Yes
Rohs Code Yes Yes
Part Life Cycle Code Obsolete Obsolete
Ihs Manufacturer ROHM CO LTD INFINEON TECHNOLOGIES AG
Package Description R-PDSO-G3 R-PDSO-G3
Pin Count 3
Reach Compliance Code compliant unknown
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.70 8541.10.00.70
Samacsys Manufacturer ROHM Semiconductor
Additional Feature HIGH RELIABILITY
Application GENERAL PURPOSE GENERAL PURPOSE
Configuration COMMON ANODE, 2 ELEMENTS COMMON ANODE, 2 ELEMENTS
Diode Element Material SILICON SILICON
Diode Type RECTIFIER DIODE RECTIFIER DIODE
Forward Voltage-Max (VF) 1.2 V
JESD-30 Code R-PDSO-G3 R-PDSO-G3
JESD-609 Code e1 e3
Moisture Sensitivity Level 1
Non-rep Pk Forward Current-Max 4 A
Number of Elements 2 2
Number of Terminals 3 3
Operating Temperature-Max 150 °C
Output Current-Max 0.1 A 0.2 A
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Power Dissipation-Max 0.15 W 0.33 W
Qualification Status Not Qualified Not Qualified
Rep Pk Reverse Voltage-Max 80 V 80 V
Reverse Current-Max 0.1 µA
Reverse Recovery Time-Max 0.004 µs 0.006 µs
Surface Mount YES YES
Terminal Finish Tin/Silver/Copper (Sn/Ag/Cu) MATTE TIN
Terminal Form GULL WING GULL WING
Terminal Position DUAL DUAL
Time@Peak Reflow Temperature-Max (s) 10
Base Number Matches 1 1

Compare BAW56T116 with alternatives

Compare BAW56E6327XT with alternatives