BAW56S-T
vs
BAW56S
feature comparison
| Rohs Code |
Yes
|
Yes
|
| Part Life Cycle Code |
Obsolete
|
Transferred
|
| Ihs Manufacturer |
NEXPERIA
|
PHILIPS SEMICONDUCTORS
|
| Package Description |
R-PDSO-G6
|
|
| Reach Compliance Code |
compliant
|
unknown
|
| ECCN Code |
EAR99
|
EAR99
|
| HTS Code |
8541.10.00.70
|
|
| Date Of Intro |
2017-02-01
|
|
| Configuration |
2 BANKS, COMMON ANODE, 2 ELEMENTS
|
|
| Diode Element Material |
SILICON
|
|
| Diode Type |
RECTIFIER DIODE
|
|
| JESD-30 Code |
R-PDSO-G6
|
|
| JESD-609 Code |
e3
|
e3
|
| Moisture Sensitivity Level |
1
|
|
| Number of Elements |
4
|
|
| Number of Terminals |
6
|
|
| Operating Temperature-Max |
125 °C
|
150 °C
|
| Output Current-Max |
0.25 A
|
|
| Package Body Material |
PLASTIC/EPOXY
|
|
| Package Shape |
RECTANGULAR
|
|
| Package Style |
SMALL OUTLINE
|
|
| Peak Reflow Temperature (Cel) |
260
|
260
|
| Power Dissipation-Max |
0.35 W
|
|
| Rep Pk Reverse Voltage-Max |
90 V
|
85 V
|
| Reverse Recovery Time-Max |
0.004 µs
|
0.006 µs
|
| Surface Mount |
YES
|
YES
|
| Terminal Finish |
TIN
|
MATTE TIN
|
| Terminal Form |
GULL WING
|
|
| Terminal Position |
DUAL
|
|
| Time@Peak Reflow Temperature-Max (s) |
30
|
|
| Base Number Matches |
2
|
5
|
| Forward Voltage-Max (VF) |
|
1.3 V
|
| Operating Temperature-Min |
|
-65 °C
|
| Reverse Current-Max |
|
2.5 µA
|
| Reverse Test Voltage |
|
70 V
|
|
|
|
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