BAW156-T
vs
BAW156212
feature comparison
All Stats
Differences Only
Rohs Code
Part Life Cycle Code
Obsolete
Obsolete
Ihs Manufacturer
NEXPERIA
NXP SEMICONDUCTORS
Package Description
R-PDSO-G3
R-PDSO-G3
Reach Compliance Code
compliant
unknown
ECCN Code
EAR99
EAR99
HTS Code
8541.10.00.70
8541.10.00.70
Date Of Intro
2017-02-01
Additional Feature
LOW LEAKAGE CURRENT
Application
GENERAL PURPOSE
GENERAL PURPOSE
Configuration
COMMON ANODE, 2 ELEMENTS
COMMON ANODE, 2 ELEMENTS
Diode Element Material
SILICON
SILICON
Diode Type
RECTIFIER DIODE
RECTIFIER DIODE
JEDEC-95 Code
TO-236AB
JESD-30 Code
R-PDSO-G3
R-PDSO-G3
JESD-609 Code
e3
Moisture Sensitivity Level
1
Number of Elements
2
2
Number of Terminals
3
3
Operating Temperature-Max
150 °C
150 °C
Output Current-Max
0.16 A
0.16 A
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Shape
RECTANGULAR
RECTANGULAR
Package Style
SMALL OUTLINE
SMALL OUTLINE
Peak Reflow Temperature (Cel)
260
Power Dissipation-Max
0.25 W
0.25 W
Rep Pk Reverse Voltage-Max
85 V
85 V
Reverse Recovery Time-Max
3 µs
3 µs
Surface Mount
YES
YES
Terminal Finish
TIN
Terminal Form
GULL WING
GULL WING
Terminal Position
DUAL
DUAL
Time@Peak Reflow Temperature-Max (s)
30
Base Number Matches
3
1
Forward Voltage-Max (VF)
1.25 V
Non-rep Pk Forward Current-Max
4 A
Qualification Status
Not Qualified
Reverse Current-Max
0.005 µA
Compare BAW156-T with alternatives
Compare BAW156212 with alternatives