BAV99W-13-F vs 1SS250TE85R feature comparison

BAV99W-13-F Diodes Incorporated

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1SS250TE85R Toshiba America Electronic Components

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Rohs Code Yes
Part Life Cycle Code Active Active
Ihs Manufacturer DIODES INC TOSHIBA CORP
Reach Compliance Code compliant unknown
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.70 8541.10.00.70
Date Of Intro 2019-05-13
Application FAST RECOVERY
Breakdown Voltage-Min 75 V
Configuration SERIES CONNECTED, CENTER TAP, 2 ELEMENTS SINGLE
Diode Element Material SILICON SILICON
Diode Type RECTIFIER DIODE RECTIFIER DIODE
Forward Voltage-Max (VF) 1.25 V 1.2 V
JESD-30 Code R-PDSO-G3 R-PDSO-G3
JESD-609 Code e3
Moisture Sensitivity Level 1
Non-rep Pk Forward Current-Max 1 A 2 A
Number of Elements 2 1
Number of Phases 1 1
Number of Terminals 3 3
Operating Temperature-Max 150 °C 125 °C
Operating Temperature-Min -65 °C
Output Current-Max 0.15 A 0.1 A
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Cel) 260 NOT SPECIFIED
Power Dissipation-Max 0.2 W 0.15 W
Rep Pk Reverse Voltage-Max 75 V
Reverse Current-Max 2.5 µA 1 µA
Reverse Recovery Time-Max 0.004 µs 0.06 µs
Reverse Test Voltage 75 V
Surface Mount YES YES
Terminal Finish MATTE TIN
Terminal Form GULL WING GULL WING
Terminal Position DUAL DUAL
Base Number Matches 1 2
Qualification Status Not Qualified
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED

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