BAV99T vs BAV99E6327XT feature comparison

BAV99T Galaxy Microelectronics

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BAV99E6327XT Infineon Technologies AG

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Rohs Code Yes
Part Life Cycle Code Active Obsolete
Ihs Manufacturer CHANGZHOU GALAXY CENTURY MICROELECTRONICS CO LTD INFINEON TECHNOLOGIES AG
Part Package Code SOT-523
Package Description SOT-523, 3 PIN R-PDSO-G3
Reach Compliance Code unknown unknown
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.70 8541.10.00.70
Application FAST RECOVERY GENERAL PURPOSE
Breakdown Voltage-Min 85 V
Configuration SERIES CONNECTED, CENTER TAP, 2 ELEMENTS SERIES CONNECTED, CENTER TAP, 2 ELEMENTS
Diode Element Material SILICON SILICON
Diode Type RECTIFIER DIODE RECTIFIER DIODE
Forward Voltage-Max (VF) 1.25 V
JESD-30 Code R-PDSO-G3 R-PDSO-G3
Non-rep Pk Forward Current-Max 4 A
Number of Elements 2 2
Number of Phases 1 1
Number of Terminals 3 3
Operating Temperature-Max 150 °C
Operating Temperature-Min -65 °C
Output Current-Max 0.155 A 0.2 A
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Cel) NOT SPECIFIED 260
Power Dissipation-Max 0.15 W 0.33 W
Rep Pk Reverse Voltage-Max 85 V 85 V
Reverse Current-Max 100 µA
Reverse Recovery Time-Max 0.004 µs 0.004 µs
Reverse Test Voltage 75 V
Surface Mount YES YES
Terminal Form GULL WING GULL WING
Terminal Position DUAL DUAL
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED 40
Base Number Matches 16 1
JESD-609 Code e3
Qualification Status Not Qualified
Reference Standard AEC-Q101
Terminal Finish MATTE TIN

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