BAV303_R1_00001
vs
BAV100L0G
feature comparison
All Stats
Differences Only
Rohs Code
Part Life Cycle Code
Active
Obsolete
Ihs Manufacturer
PAN JIT INTERNATIONAL INC
TAIWAN SEMICONDUCTOR CO LTD
Package Description
MELF-2
O-LELF-R2
Reach Compliance Code
compliant
unknown
ECCN Code
EAR99
EAR99
HTS Code
8541.10.00.70
8541.10.00.70
Application
GENERAL PURPOSE
GENERAL PURPOSE
Case Connection
ISOLATED
ISOLATED
Configuration
SINGLE
SINGLE
Diode Element Material
SILICON
SILICON
Diode Type
RECTIFIER DIODE
RECTIFIER DIODE
JESD-30 Code
O-LELF-R2
O-LELF-R2
Number of Elements
1
1
Number of Phases
1
1
Number of Terminals
2
2
Operating Temperature-Min
-65 °C
-65 °C
Output Current-Max
0.2 A
0.2 A
Package Body Material
GLASS
GLASS
Package Shape
ROUND
ROUND
Package Style
LONG FORM
LONG FORM
Peak Reflow Temperature (Cel)
NOT SPECIFIED
NOT SPECIFIED
Power Dissipation-Max
0.3 W
0.5 W
Rep Pk Reverse Voltage-Max
250 V
250 V
Reverse Recovery Time-Max
0.075 µs
0.05 µs
Surface Mount
YES
YES
Terminal Form
WRAP AROUND
WRAP AROUND
Terminal Position
END
END
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
NOT SPECIFIED
Base Number Matches
1
1
Operating Temperature-Max
200 °C
Compare BAV303_R1_00001 with alternatives
Compare BAV100L0G with alternatives