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BAV23S212 vs BAV23STRL feature comparison

BAV23S212 NXP Semiconductors

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BAV23STRL YAGEO Corporation

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Part Life Cycle Code Obsolete Obsolete
Ihs Manufacturer NXP SEMICONDUCTORS PHILIPS COMPONENTS
Package Description R-PDSO-G3 R-PDSO-G4
Reach Compliance Code unknown unknown
ECCN Code EAR99 EAR99
Application GENERAL PURPOSE
Configuration SERIES CONNECTED, CENTER TAP, 2 ELEMENTS SERIES CONNECTED, CENTER TAP, 2 ELEMENTS
Diode Element Material SILICON SILICON
Diode Type RECTIFIER DIODE RECTIFIER DIODE
JESD-30 Code R-PDSO-G3 R-PDSO-G4
Number of Elements 2 2
Number of Terminals 3 4
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Power Dissipation-Max 0.25 W 1 W
Qualification Status Not Qualified Not Qualified
Rep Pk Reverse Voltage-Max 250 V
Reverse Recovery Time-Max 0.05 µs 0.05 µs
Surface Mount YES YES
Terminal Form GULL WING GULL WING
Terminal Position DUAL DUAL
Base Number Matches 1 2
HTS Code 8541.10.00.70
Forward Voltage-Max (VF) 1 V
Output Current-Max 0.2 A
Diodes » Rectifier Diodes
Diodes » Rectifier Diodes

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