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BAV23S,235 vs BAV23S212 feature comparison

BAV23S,235 Nexperia

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BAV23S212 NXP Semiconductors

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Part Life Cycle Code Active Obsolete
Ihs Manufacturer NEXPERIA NXP SEMICONDUCTORS
Part Package Code TO-236
Package Description PLASTIC PACKAGE-3 R-PDSO-G3
Pin Count 3
Manufacturer Package Code SOT23
Reach Compliance Code compliant unknown
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.70
Date Of Intro 1993-03-01
Samacsys Manufacturer Nexperia
Additional Feature HALOGEN FREE
Application GENERAL PURPOSE GENERAL PURPOSE
Configuration SERIES CONNECTED, CENTER TAP, 2 ELEMENTS SERIES CONNECTED, CENTER TAP, 2 ELEMENTS
Diode Element Material SILICON SILICON
Diode Type RECTIFIER DIODE RECTIFIER DIODE
Forward Voltage-Max (VF) 1.25 V
JEDEC-95 Code TO-236AB
JESD-30 Code R-PDSO-G3 R-PDSO-G3
JESD-609 Code e3
Moisture Sensitivity Level 1
Non-rep Pk Forward Current-Max 2.5 A
Number of Elements 2 2
Number of Terminals 3 3
Operating Temperature-Max 150 °C 150 °C
Output Current-Max 0.125 A
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Power Dissipation-Max 0.25 W 0.25 W
Qualification Status Not Qualified Not Qualified
Reference Standard IEC-60134
Rep Pk Reverse Voltage-Max 250 V 250 V
Reverse Current-Max 0.1 µA
Reverse Recovery Time-Max 0.05 µs 0.05 µs
Surface Mount YES YES
Terminal Finish TIN
Terminal Form GULL WING GULL WING
Terminal Position DUAL DUAL
Time@Peak Reflow Temperature-Max (s) 30
Base Number Matches 2 1
Diodes » Rectifier Diodes
Diodes » Rectifier Diodes

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