BAV19W-G vs BAV19W-GRH feature comparison

BAV19W-G Sangdest Microelectronics (Nanjing) Co Ltd

Buy Now Datasheet

BAV19W-GRH Taiwan Semiconductor

Buy Now Datasheet
Rohs Code Yes Yes
Part Life Cycle Code Obsolete Active
Ihs Manufacturer SANGDEST MICROELECTRONICS (NANJING) CO LTD TAIWAN SEMICONDUCTOR CO LTD
Package Description GREEN, PLASTIC PACKAGE-2
Reach Compliance Code unknown compliant
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type RECTIFIER DIODE RECTIFIER DIODE
JESD-30 Code R-PDSO-G2 R-PDSO-G2
Number of Elements 1 1
Number of Phases 1 1
Number of Terminals 2 2
Output Current-Max 0.2 A 0.2 A
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Cel) NOT SPECIFIED 260
Power Dissipation-Max 0.41 W 0.5 W
Qualification Status Not Qualified
Rep Pk Reverse Voltage-Max 100 V 120 V
Reverse Recovery Time-Max 0.05 µs 0.05 µs
Surface Mount YES YES
Terminal Form GULL WING GULL WING
Terminal Position DUAL DUAL
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED 30
Base Number Matches 2 2
ECCN Code EAR99
HTS Code 8541.10.00.70
Date Of Intro 2016-03-30
Application GENERAL PURPOSE
JESD-609 Code e3
Moisture Sensitivity Level 1
Operating Temperature-Max 150 °C
Operating Temperature-Min -65 °C
Terminal Finish MATTE TIN

Compare BAV19W-G with alternatives

Compare BAV19W-GRH with alternatives