BAV199W vs BAV199W-7 feature comparison

BAV199W Galaxy Microelectronics

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BAV199W-7 Diodes Incorporated

Buy Now Datasheet
Part Life Cycle Code Active Active
Ihs Manufacturer CHANGZHOU GALAXY CENTURY MICROELECTRONICS CO LTD DIODES INC
Reach Compliance Code unknown compliant
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.70 8541.10.00.70
Application GENERAL PURPOSE
Breakdown Voltage-Min 85 V
Configuration SERIES CONNECTED, CENTER TAP, 2 ELEMENTS SERIES CONNECTED, CENTER TAP, 2 ELEMENTS
Diode Element Material SILICON SILICON
Diode Type RECTIFIER DIODE RECTIFIER DIODE
Forward Voltage-Max (VF) 1.25 V 0.9 V
JESD-30 Code R-PDSO-G3 R-PDSO-G3
Non-rep Pk Forward Current-Max 4 A 0.5 A
Number of Elements 2 2
Number of Phases 1
Number of Terminals 3 3
Operating Temperature-Max 150 °C 150 °C
Operating Temperature-Min -65 °C -65 °C
Output Current-Max 0.16 A 0.16 A
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Power Dissipation-Max 0.2 W 0.2 W
Rep Pk Reverse Voltage-Max 85 V 85 V
Reverse Current-Max 0.08 µA
Reverse Recovery Time-Max 3 µs 3 µs
Reverse Test Voltage 75 V
Surface Mount YES YES
Terminal Form GULL WING GULL WING
Terminal Position DUAL DUAL
Base Number Matches 8 1
Pbfree Code Yes
Rohs Code Yes
Package Description GREEN, PLASTIC PACKAGE-3
Pin Count 3
Samacsys Manufacturer Diodes Incorporated
JESD-609 Code e3
Moisture Sensitivity Level 1
Peak Reflow Temperature (Cel) 260
Qualification Status Not Qualified
Terminal Finish MATTE TIN
Time@Peak Reflow Temperature-Max (s) 30

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