BAV199W
vs
BAV199T/R
feature comparison
All Stats
Differences Only
Part Life Cycle Code
Active
Transferred
Ihs Manufacturer
CHANGZHOU GALAXY CENTURY MICROELECTRONICS CO LTD
NXP SEMICONDUCTORS
Reach Compliance Code
unknown
unknown
ECCN Code
EAR99
EAR99
HTS Code
8541.10.00.70
8541.10.00.70
Application
GENERAL PURPOSE
Breakdown Voltage-Min
85 V
Configuration
SERIES CONNECTED, CENTER TAP, 2 ELEMENTS
SERIES CONNECTED, CENTER TAP, 2 ELEMENTS
Diode Element Material
SILICON
SILICON
Diode Type
RECTIFIER DIODE
RECTIFIER DIODE
Forward Voltage-Max (VF)
1.25 V
1.1 V
JESD-30 Code
R-PDSO-G3
R-PDSO-G3
Non-rep Pk Forward Current-Max
4 A
4 A
Number of Elements
2
2
Number of Phases
1
Number of Terminals
3
3
Operating Temperature-Max
150 °C
150 °C
Operating Temperature-Min
-65 °C
Output Current-Max
0.16 A
0.16 A
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Shape
RECTANGULAR
RECTANGULAR
Package Style
SMALL OUTLINE
SMALL OUTLINE
Power Dissipation-Max
0.2 W
0.25 W
Rep Pk Reverse Voltage-Max
85 V
85 V
Reverse Current-Max
0.08 µA
Reverse Recovery Time-Max
3 µs
3 µs
Reverse Test Voltage
75 V
Surface Mount
YES
YES
Terminal Form
GULL WING
GULL WING
Terminal Position
DUAL
DUAL
Base Number Matches
8
3
Rohs Code
Part Package Code
SOT-23
Package Description
R-PDSO-G3
Pin Count
3
JEDEC-95 Code
TO-236AB
JESD-609 Code
e3
Peak Reflow Temperature (Cel)
260
Qualification Status
Not Qualified
Terminal Finish
Matte Tin (Sn)
Time@Peak Reflow Temperature-Max (s)
40
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