BAV199LT3
vs
BAV199LT1G
feature comparison
Part Life Cycle Code |
Transferred
|
Active
|
Ihs Manufacturer |
MOTOROLA INC
|
ONSEMI
|
Part Package Code |
SOT-23
|
SOT-23 (TO-236) 3 LEAD
|
Package Description |
R-PDSO-G3
|
HALOGEN FREE AND ROHS COMPLIANT, CASE 318-08, 3 PIN
|
Pin Count |
3
|
3
|
Manufacturer Package Code |
CASE 318-08
|
318-08
|
Reach Compliance Code |
unknown
|
compliant
|
ECCN Code |
EAR99
|
EAR99
|
HTS Code |
8541.10.00.70
|
8541.10.00.70
|
Additional Feature |
LOW LEAKAGE CURRENT
|
LOW LEAKAGE CURRENT
|
Configuration |
SERIES CONNECTED, CENTER TAP, 2 ELEMENTS
|
SERIES CONNECTED, CENTER TAP, 2 ELEMENTS
|
Diode Element Material |
SILICON
|
SILICON
|
Diode Type |
RECTIFIER DIODE
|
RECTIFIER DIODE
|
Forward Voltage-Max (VF) |
1.25 V
|
1.25 V
|
JEDEC-95 Code |
TO-236AB
|
TO-236AA
|
JESD-30 Code |
R-PDSO-G3
|
R-PDSO-G3
|
Non-rep Pk Forward Current-Max |
2 A
|
0.5 A
|
Number of Elements |
2
|
2
|
Number of Terminals |
3
|
3
|
Operating Temperature-Max |
150 °C
|
150 °C
|
Operating Temperature-Min |
-65 °C
|
-65 °C
|
Output Current-Max |
0.215 A
|
0.215 A
|
Package Body Material |
PLASTIC/EPOXY
|
PLASTIC/EPOXY
|
Package Shape |
RECTANGULAR
|
RECTANGULAR
|
Package Style |
SMALL OUTLINE
|
SMALL OUTLINE
|
Power Dissipation-Max |
0.225 W
|
0.225 W
|
Qualification Status |
Not Qualified
|
Not Qualified
|
Rep Pk Reverse Voltage-Max |
70 V
|
70 V
|
Reverse Current-Max |
0.005 µA
|
|
Reverse Recovery Time-Max |
3 µs
|
3 µs
|
Surface Mount |
YES
|
YES
|
Terminal Form |
GULL WING
|
GULL WING
|
Terminal Position |
DUAL
|
DUAL
|
Base Number Matches |
4
|
1
|
Pbfree Code |
|
Yes
|
Factory Lead Time |
|
2 Days
|
Samacsys Manufacturer |
|
onsemi
|
Application |
|
GENERAL PURPOSE
|
JESD-609 Code |
|
e3
|
Moisture Sensitivity Level |
|
1
|
Number of Phases |
|
1
|
Peak Reflow Temperature (Cel) |
|
260
|
Terminal Finish |
|
Matte Tin (Sn) - annealed
|
Time@Peak Reflow Temperature-Max (s) |
|
40
|
|
|
|
Compare BAV199LT3 with alternatives
Compare BAV199LT1G with alternatives