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BAV199E6327 vs BAV199,235 feature comparison

BAV199E6327 Siemens

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BAV199,235 NXP Semiconductors

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Part Life Cycle Code Transferred Transferred
Ihs Manufacturer SIEMENS A G NXP SEMICONDUCTORS
Reach Compliance Code unknown compliant
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.70 8541.10.00.70
Configuration SERIES CONNECTED, CENTER TAP, 2 ELEMENTS SERIES CONNECTED, CENTER TAP, 2 ELEMENTS
Diode Element Material SILICON SILICON
Diode Type RECTIFIER DIODE RECTIFIER DIODE
Forward Voltage-Max (VF) 1.25 V 0.9 V
JESD-30 Code R-PDSO-G3 R-PDSO-G3
Non-rep Pk Forward Current-Max 4.5 A 1 A
Number of Elements 2 2
Number of Terminals 3 3
Operating Temperature-Max 150 °C 150 °C
Output Current-Max 0.2 A 0.16 A
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Power Dissipation-Max 0.33 W 0.25 W
Qualification Status Not Qualified Not Qualified
Reverse Current-Max 0.005 µA
Reverse Recovery Time-Max 3 µs 3 µs
Surface Mount YES YES
Terminal Form GULL WING GULL WING
Terminal Position DUAL DUAL
Base Number Matches 3 2
Rohs Code Yes
Part Package Code TO-236
Package Description R-PDSO-G3
Pin Count 3
Manufacturer Package Code SOT23
JEDEC-95 Code TO-236AB
JESD-609 Code e3
Moisture Sensitivity Level 1
Peak Reflow Temperature (Cel) 260
Rep Pk Reverse Voltage-Max 85 V
Terminal Finish TIN
Time@Peak Reflow Temperature-Max (s) 30
Diodes » Rectifier Diodes
Diodes » Rectifier Diodes

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