BAV199
vs
BAV199W
feature comparison
All Stats
Differences Only
Part Life Cycle Code
Active
Active
Ihs Manufacturer
GALAXY SEMI-CONDUCTOR CO LTD
CHANGZHOU GALAXY CENTURY MICROELECTRONICS CO LTD
Package Description
R-PDSO-G3
Reach Compliance Code
unknown
unknown
ECCN Code
EAR99
EAR99
HTS Code
8541.10.00.70
8541.10.00.70
Application
GENERAL PURPOSE
GENERAL PURPOSE
Breakdown Voltage-Min
85 V
85 V
Configuration
SERIES CONNECTED, CENTER TAP, 2 ELEMENTS
SERIES CONNECTED, CENTER TAP, 2 ELEMENTS
Diode Element Material
SILICON
SILICON
Diode Type
RECTIFIER DIODE
RECTIFIER DIODE
Forward Voltage-Max (VF)
1.25 V
1.25 V
JESD-30 Code
R-PDSO-G3
R-PDSO-G3
Non-rep Pk Forward Current-Max
4 A
4 A
Number of Elements
2
2
Number of Phases
1
1
Number of Terminals
3
3
Operating Temperature-Max
150 °C
150 °C
Operating Temperature-Min
-65 °C
-65 °C
Output Current-Max
0.16 A
0.16 A
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Shape
RECTANGULAR
RECTANGULAR
Package Style
SMALL OUTLINE
SMALL OUTLINE
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Power Dissipation-Max
0.25 W
0.2 W
Rep Pk Reverse Voltage-Max
85 V
85 V
Reverse Current-Max
0.005 µA
0.08 µA
Reverse Recovery Time-Max
0.003 µs
3 µs
Reverse Test Voltage
75 V
75 V
Surface Mount
YES
YES
Terminal Form
GULL WING
GULL WING
Terminal Position
DUAL
DUAL
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
Base Number Matches
21
8