BAV16W-R1-10001
vs
BAV19WRHG
feature comparison
All Stats
Differences Only
Rohs Code
Yes
Yes
Part Life Cycle Code
Active
Active
Ihs Manufacturer
PAN JIT INTERNATIONAL INC
TAIWAN SEMICONDUCTOR CO LTD
Reach Compliance Code
compliant
compliant
ECCN Code
EAR99
EAR99
HTS Code
8541.10.00.70
8541.10.00.70
Application
FAST RECOVERY
GENERAL PURPOSE
Configuration
SINGLE
SINGLE
Diode Element Material
SILICON
SILICON
Diode Type
RECTIFIER DIODE
RECTIFIER DIODE
Forward Voltage-Max (VF)
0.855 V
JESD-30 Code
R-PDSO-G2
R-PDSO-F2
Non-rep Pk Forward Current-Max
4 A
Number of Elements
1
1
Number of Phases
1
1
Number of Terminals
2
2
Operating Temperature-Max
150 °C
150 °C
Operating Temperature-Min
-55 °C
-65 °C
Output Current-Max
0.15 A
0.2 A
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Shape
RECTANGULAR
RECTANGULAR
Package Style
SMALL OUTLINE
SMALL OUTLINE
Power Dissipation-Max
0.35 W
0.41 W
Rep Pk Reverse Voltage-Max
100 V
250 V
Reverse Current-Max
1 µA
Reverse Recovery Time-Max
0.006 µs
0.05 µs
Reverse Test Voltage
75 V
Surface Mount
YES
YES
Terminal Form
GULL WING
FLAT
Terminal Position
DUAL
DUAL
Base Number Matches
1
1
Package Description
GREEN, PLASTIC PACKAGE-2
JESD-609 Code
e3
Moisture Sensitivity Level
1
Peak Reflow Temperature (Cel)
260
Qualification Status
Not Qualified
Terminal Finish
MATTE TIN OVER NICKEL
Time@Peak Reflow Temperature-Max (s)
30
Compare BAV16W-R1-10001 with alternatives
Compare BAV19WRHG with alternatives