BAV102 vs BAV102 feature comparison

BAV102 YAGEO Corporation

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BAV102 NXP Semiconductors

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Part Life Cycle Code Obsolete Transferred
Ihs Manufacturer PHILIPS COMPONENTS NXP SEMICONDUCTORS
Reach Compliance Code unknown compliant
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.70 8541.10.00.70
Case Connection ISOLATED ISOLATED
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type RECTIFIER DIODE RECTIFIER DIODE
Forward Voltage-Max (VF) 1 V 1.25 V
JESD-30 Code O-LELF-R2 O-LELF-R2
Number of Elements 1 1
Number of Phases 1 1
Number of Terminals 2 2
Output Current-Max 0.25 A 0.25 A
Package Body Material GLASS GLASS
Package Shape ROUND ROUND
Package Style LONG FORM LONG FORM
Qualification Status Not Qualified Not Qualified
Reverse Recovery Time-Max 0.05 µs 0.05 µs
Surface Mount YES YES
Terminal Form WRAP AROUND WRAP AROUND
Terminal Position END END
Base Number Matches 92 9
Pbfree Code Yes
Rohs Code Yes
Package Description HERMETIC SEALED, GLASS PACKAGE-2
Pin Count 2
Samacsys Manufacturer NXP
JESD-609 Code e3
Moisture Sensitivity Level 1
Non-rep Pk Forward Current-Max 5 A
Operating Temperature-Max 175 °C
Peak Reflow Temperature (Cel) 260
Power Dissipation-Max 0.4 W
Rep Pk Reverse Voltage-Max 200 V
Reverse Current-Max 0.1 µA
Terminal Finish Tin (Sn)
Time@Peak Reflow Temperature-Max (s) 30

Compare BAV102 with alternatives

Compare BAV102 with alternatives