BAV102,115
vs
BAV102-GS08
feature comparison
| Rohs Code |
Yes
|
No
|
| Part Life Cycle Code |
Transferred
|
Transferred
|
| Ihs Manufacturer |
NXP SEMICONDUCTORS
|
TELEFUNKEN MICROELECTRONICS GMBH
|
| Part Package Code |
MELF
|
|
| Package Description |
HERMETIC SEALED, GLASS PACKAGE-2
|
|
| Pin Count |
2
|
|
| Manufacturer Package Code |
SOD80C
|
|
| Reach Compliance Code |
compliant
|
unknown
|
| ECCN Code |
EAR99
|
EAR99
|
| HTS Code |
8541.10.00.80
|
|
| Factory Lead Time |
4 Weeks
|
|
| Case Connection |
ISOLATED
|
|
| Configuration |
SINGLE
|
SINGLE
|
| Diode Element Material |
SILICON
|
|
| Diode Type |
RECTIFIER DIODE
|
RECTIFIER DIODE
|
| Forward Voltage-Max (VF) |
1.25 V
|
1 V
|
| JESD-30 Code |
O-LELF-R2
|
|
| JESD-609 Code |
e3
|
e0
|
| Moisture Sensitivity Level |
1
|
|
| Non-rep Pk Forward Current-Max |
5 A
|
1 A
|
| Number of Elements |
1
|
1
|
| Number of Phases |
1
|
1
|
| Number of Terminals |
2
|
|
| Operating Temperature-Max |
175 °C
|
175 °C
|
| Output Current-Max |
0.25 A
|
0.25 A
|
| Package Body Material |
GLASS
|
|
| Package Shape |
ROUND
|
|
| Package Style |
LONG FORM
|
|
| Peak Reflow Temperature (Cel) |
260
|
|
| Power Dissipation-Max |
0.4 W
|
|
| Qualification Status |
Not Qualified
|
|
| Rep Pk Reverse Voltage-Max |
200 V
|
200 V
|
| Reverse Current-Max |
0.1 µA
|
|
| Reverse Recovery Time-Max |
0.05 µs
|
|
| Surface Mount |
YES
|
YES
|
| Terminal Finish |
TIN
|
Tin/Lead (Sn/Pb)
|
| Terminal Form |
WRAP AROUND
|
|
| Terminal Position |
END
|
|
| Time@Peak Reflow Temperature-Max (s) |
30
|
|
| Base Number Matches |
2
|
3
|
| Application |
|
GENERAL PURPOSE
|
|
|
|
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