BAT54XG vs BAT54LT3G feature comparison

BAT54XG Galaxy Microelectronics

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BAT54LT3G onsemi

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Part Life Cycle Code Active End Of Life
Ihs Manufacturer CHANGZHOU GALAXY CENTURY MICROELECTRONICS CO LTD ONSEMI
Reach Compliance Code unknown compliant
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.70 8541.10.00.70
Application FAST RECOVERY FAST RECOVERY
Breakdown Voltage-Min 30 V 30 V
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type RECTIFIER DIODE RECTIFIER DIODE
Forward Voltage-Max (VF) 0.8 V 0.8 V
JESD-30 Code R-PDSO-F2 R-PDSO-G3
Non-rep Pk Forward Current-Max 0.6 A 0.6 A
Number of Elements 1 1
Number of Phases 1 1
Number of Terminals 2 3
Operating Temperature-Max 125 °C 150 °C
Output Current-Max 0.2 A 0.2 A
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Power Dissipation-Max 0.15 W 0.2 W
Rep Pk Reverse Voltage-Max 30 V 30 V
Reverse Current-Max 2 µA 2 µA
Reverse Recovery Time-Max 0.005 µs 0.005 µs
Reverse Test Voltage 25 V 25 V
Surface Mount YES YES
Technology SCHOTTKY SCHOTTKY
Terminal Form FLAT GULL WING
Terminal Position DUAL DUAL
Base Number Matches 1 1
Pbfree Code Yes
Manufacturer Package Code 318-08
Date Of Intro 2018-08-13
Samacsys Manufacturer onsemi
JEDEC-95 Code TO-236
JESD-609 Code e3
Moisture Sensitivity Level 1
Operating Temperature-Min -55 °C
Peak Reflow Temperature (Cel) 260
Terminal Finish MATTE TIN
Time@Peak Reflow Temperature-Max (s) 30

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