BAT54H,115 vs BAT54H feature comparison

BAT54H,115 NXP Semiconductors

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BAT54H Galaxy Semi-Conductor Co Ltd

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Rohs Code Yes
Part Life Cycle Code Transferred Active
Ihs Manufacturer NXP SEMICONDUCTORS GALAXY SEMI-CONDUCTOR CO LTD
Part Package Code SOD-123
Package Description PLASTIC PACKAGE-2 R-PDSO-G2
Pin Count 2
Manufacturer Package Code SOD123F
Reach Compliance Code compliant unknown
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.70 8541.10.00.70
Application GENERAL PURPOSE
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type RECTIFIER DIODE RECTIFIER DIODE
Forward Voltage-Max (VF) 0.8 V
JESD-30 Code R-PDSO-F2 R-PDSO-G2
JESD-609 Code e3
Moisture Sensitivity Level 1
Non-rep Pk Forward Current-Max 0.6 A
Number of Elements 1 1
Number of Phases 1 1
Number of Terminals 2 2
Operating Temperature-Max 125 °C 150 °C
Operating Temperature-Min -65 °C
Output Current-Max 0.2 A 0.2 A
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Cel) 260 NOT SPECIFIED
Power Dissipation-Max 0.375 W 0.2 W
Qualification Status Not Qualified
Reference Standard AEC-Q101; IEC-60134
Rep Pk Reverse Voltage-Max 30 V 30 V
Reverse Current-Max 2 µA
Reverse Test Voltage 25 V
Surface Mount YES YES
Technology SCHOTTKY SCHOTTKY
Terminal Finish TIN
Terminal Form FLAT GULL WING
Terminal Position DUAL DUAL
Time@Peak Reflow Temperature-Max (s) 30 NOT SPECIFIED
Base Number Matches 2 10
Reverse Recovery Time-Max 0.005 µs

Compare BAT54H,115 with alternatives

Compare BAT54H with alternatives