BAS86 vs BAS386-TR3 feature comparison

BAS86 Galaxy Semi-Conductor Co Ltd

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BAS386-TR3 Vishay Intertechnologies

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Part Life Cycle Code Active Active
Ihs Manufacturer GALAXY SEMI-CONDUCTOR CO LTD VISHAY INTERTECHNOLOGY INC
Reach Compliance Code unknown compliant
ECCN Code EAR99
HTS Code 8541.10.00.70
Application FAST RECOVERY GENERAL PURPOSE
Breakdown Voltage-Min 50 V
Case Connection ISOLATED ISOLATED
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type RECTIFIER DIODE RECTIFIER DIODE
Forward Voltage-Max (VF) 0.9 V 0.3 V
JESD-30 Code O-LELF-R2 O-LELF-R2
Non-rep Pk Forward Current-Max 5 A 5 A
Number of Elements 1 1
Number of Phases 1 1
Number of Terminals 2 2
Operating Temperature-Max 125 °C 125 °C
Operating Temperature-Min -55 °C
Output Current-Max 0.2 A 0.2 A
Package Body Material GLASS GLASS
Package Shape ROUND ROUND
Package Style LONG FORM LONG FORM
Power Dissipation-Max 0.2 W
Rep Pk Reverse Voltage-Max 50 V 50 V
Reverse Current-Max 5 µA
Reverse Recovery Time-Max 0.005 µs
Reverse Test Voltage 40 V
Surface Mount YES YES
Technology SCHOTTKY SCHOTTKY
Terminal Form WRAP AROUND WRAP AROUND
Terminal Position END END
Base Number Matches 1 1
Rohs Code Yes
Factory Lead Time 9 Weeks
Samacsys Manufacturer Vishay
JESD-609 Code e2
Moisture Sensitivity Level 1
Peak Reflow Temperature (Cel) 260
Qualification Status Not Qualified
Terminal Finish TIN SILVER
Time@Peak Reflow Temperature-Max (s) 40