BAS56-T
vs
BAS56TR13LEADFREE
feature comparison
Pbfree Code |
Yes
|
Yes
|
Rohs Code |
Yes
|
Yes
|
Part Life Cycle Code |
Obsolete
|
Obsolete
|
Ihs Manufacturer |
NXP SEMICONDUCTORS
|
CENTRAL SEMICONDUCTOR CORP
|
Package Description |
R-PDSO-G4
|
R-PDSO-G4
|
Pin Count |
4
|
|
Reach Compliance Code |
unknown
|
compliant
|
ECCN Code |
EAR99
|
EAR99
|
HTS Code |
8541.10.00.70
|
8541.10.00.70
|
Application |
GENERAL PURPOSE
|
GENERAL PURPOSE
|
Case Connection |
CATHODE
|
|
Configuration |
SEPARATE, 2 ELEMENTS
|
SEPARATE, 2 ELEMENTS
|
Diode Element Material |
SILICON
|
SILICON
|
Diode Type |
RECTIFIER DIODE
|
RECTIFIER DIODE
|
Forward Voltage-Max (VF) |
1 V
|
1.25 V
|
JESD-30 Code |
R-PDSO-G4
|
R-PDSO-G4
|
JESD-609 Code |
e3
|
e3
|
Non-rep Pk Forward Current-Max |
2 A
|
4 A
|
Number of Elements |
2
|
2
|
Number of Terminals |
4
|
4
|
Operating Temperature-Max |
150 °C
|
150 °C
|
Output Current-Max |
0.2 A
|
0.2 A
|
Package Body Material |
PLASTIC/EPOXY
|
PLASTIC/EPOXY
|
Package Shape |
RECTANGULAR
|
RECTANGULAR
|
Package Style |
SMALL OUTLINE
|
SMALL OUTLINE
|
Power Dissipation-Max |
0.25 W
|
0.35 W
|
Qualification Status |
Not Qualified
|
Not Qualified
|
Rep Pk Reverse Voltage-Max |
60 V
|
60 V
|
Reverse Current-Max |
0.1 µA
|
10 µA
|
Reverse Recovery Time-Max |
0.006 µs
|
0.006 µs
|
Surface Mount |
YES
|
YES
|
Terminal Finish |
TIN
|
MATTE TIN
|
Terminal Form |
GULL WING
|
GULL WING
|
Terminal Position |
DUAL
|
DUAL
|
Base Number Matches |
1
|
1
|
Moisture Sensitivity Level |
|
1
|
Operating Temperature-Min |
|
-65 °C
|
|
|
|
Compare BAS56-T with alternatives
Compare BAS56TR13LEADFREE with alternatives