BAS45AL
vs
BAS45AL135
feature comparison
Pbfree Code |
Yes
|
|
Rohs Code |
Yes
|
|
Part Life Cycle Code |
Transferred
|
Active
|
Ihs Manufacturer |
NXP SEMICONDUCTORS
|
NXP SEMICONDUCTORS
|
Package Description |
HERMETIC SEALED, GLASS PACKAGE-2
|
O-LELF-R2
|
Pin Count |
2
|
|
Reach Compliance Code |
compliant
|
compliant
|
ECCN Code |
EAR99
|
|
HTS Code |
8541.10.00.70
|
|
Additional Feature |
LOW LEAKAGE CURRENT
|
|
Case Connection |
ISOLATED
|
ISOLATED
|
Configuration |
SINGLE
|
SINGLE
|
Diode Element Material |
SILICON
|
SILICON
|
Diode Type |
RECTIFIER DIODE
|
RECTIFIER DIODE
|
Forward Voltage-Max (VF) |
1 V
|
1 V
|
JESD-30 Code |
O-LELF-R2
|
O-LELF-R2
|
JESD-609 Code |
e3
|
|
Moisture Sensitivity Level |
1
|
|
Non-rep Pk Forward Current-Max |
4 A
|
4 A
|
Number of Elements |
1
|
1
|
Number of Phases |
1
|
|
Number of Terminals |
2
|
2
|
Operating Temperature-Max |
175 °C
|
175 °C
|
Output Current-Max |
0.25 A
|
0.25 A
|
Package Body Material |
GLASS
|
GLASS
|
Package Shape |
ROUND
|
ROUND
|
Package Style |
LONG FORM
|
LONG FORM
|
Peak Reflow Temperature (Cel) |
260
|
|
Power Dissipation-Max |
0.4 W
|
0.4 W
|
Qualification Status |
Not Qualified
|
Not Qualified
|
Rep Pk Reverse Voltage-Max |
125 V
|
125 V
|
Reverse Recovery Time-Max |
1.5 µs
|
1.5 µs
|
Surface Mount |
YES
|
YES
|
Terminal Finish |
Tin (Sn)
|
|
Terminal Form |
WRAP AROUND
|
WRAP AROUND
|
Terminal Position |
END
|
END
|
Time@Peak Reflow Temperature-Max (s) |
30
|
|
Base Number Matches |
6
|
2
|
Reverse Current-Max |
|
0.001 µA
|
|
|
|
Compare BAS45AL with alternatives
Compare BAS45AL135 with alternatives