BAS40-05/G
vs
BAS40-05212
feature comparison
All Stats
Differences Only
Part Life Cycle Code
Obsolete
Obsolete
Ihs Manufacturer
NEXPERIA
NXP SEMICONDUCTORS
Reach Compliance Code
unknown
unknown
ECCN Code
EAR99
EAR99
HTS Code
8541.10.00.70
8541.10.00.70
Additional Feature
LOW LEAKAGE CURRENT
Application
GENERAL PURPOSE
GENERAL PURPOSE
Configuration
COMMON CATHODE, 2 ELEMENTS
COMMON CATHODE, 2 ELEMENTS
Diode Element Material
SILICON
SILICON
Diode Type
RECTIFIER DIODE
RECTIFIER DIODE
Forward Voltage-Max (VF)
1 V
1 V
JEDEC-95 Code
TO-236AB
JESD-30 Code
R-PDSO-G3
R-PDSO-G3
JESD-609 Code
e3
Moisture Sensitivity Level
1
Non-rep Pk Forward Current-Max
0.2 A
0.2 A
Number of Elements
2
2
Number of Phases
1
Number of Terminals
3
3
Operating Temperature-Max
150 °C
150 °C
Operating Temperature-Min
-65 °C
Output Current-Max
0.12 A
0.12 A
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Shape
RECTANGULAR
RECTANGULAR
Package Style
SMALL OUTLINE
SMALL OUTLINE
Peak Reflow Temperature (Cel)
260
Reference Standard
AEC-Q101; IEC-60134
Rep Pk Reverse Voltage-Max
40 V
Reverse Current-Max
10 µA
10 µA
Reverse Test Voltage
40 V
Surface Mount
YES
YES
Technology
SCHOTTKY
SCHOTTKY
Terminal Finish
TIN
Terminal Form
GULL WING
GULL WING
Terminal Position
DUAL
DUAL
Time@Peak Reflow Temperature-Max (s)
30
Base Number Matches
1
1
Package Description
R-PDSO-G3
Power Dissipation-Max
0.25 W
Qualification Status
Not Qualified
Compare BAS40-05/G with alternatives
Compare BAS40-05212 with alternatives