BAS316,115 vs BAS316RR feature comparison

BAS316,115 NXP Semiconductors

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BAS316RR Taiwan Semiconductor

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Rohs Code Yes Yes
Part Life Cycle Code Transferred Active
Ihs Manufacturer NXP SEMICONDUCTORS TAIWAN SEMICONDUCTOR CO LTD
Part Package Code SOD
Pin Count 2
Manufacturer Package Code SOD323
Reach Compliance Code compliant compliant
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.70 8541.10.00.70
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type RECTIFIER DIODE RECTIFIER DIODE
Forward Voltage-Max (VF) 1.25 V
JESD-30 Code R-PDSO-G2 R-PDSO-G2
JESD-609 Code e3 e3
Moisture Sensitivity Level 1 1
Non-rep Pk Forward Current-Max 4 A
Number of Elements 1 1
Number of Phases 1 1
Number of Terminals 2 2
Operating Temperature-Max 150 °C 150 °C
Output Current-Max 0.25 A 0.25 A
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Cel) 260 260
Power Dissipation-Max 0.4 W 0.2 W
Qualification Status Not Qualified Not Qualified
Rep Pk Reverse Voltage-Max 85 V
Reverse Current-Max 1 µA
Reverse Recovery Time-Max 0.004 µs 0.004 µs
Surface Mount YES YES
Terminal Finish TIN MATTE TIN
Terminal Form GULL WING GULL WING
Terminal Position DUAL DUAL
Time@Peak Reflow Temperature-Max (s) 30 30
Base Number Matches 2 1
Package Description ROHS COMPLIANT, PLASTIC PACKAGE-2
Application GENERAL PURPOSE
Operating Temperature-Min -65 °C

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