BAS31,215
vs
BAS31212
feature comparison
All Stats
Differences Only
Rohs Code
Part Life Cycle Code
Transferred
Obsolete
Ihs Manufacturer
NXP SEMICONDUCTORS
NXP SEMICONDUCTORS
Part Package Code
TO-236
Package Description
PLASTIC PACKAGE-3
R-PDSO-G3
Pin Count
3
Manufacturer Package Code
SOT23
Reach Compliance Code
compliant
unknown
ECCN Code
EAR99
EAR99
HTS Code
8541.10.00.70
Configuration
SERIES CONNECTED, CENTER TAP, 2 ELEMENTS
SERIES CONNECTED, CENTER TAP, 2 ELEMENTS
Diode Element Material
SILICON
SILICON
Diode Type
RECTIFIER DIODE
RECTIFIER DIODE
Forward Voltage-Max (VF)
1.25 V
JEDEC-95 Code
TO-236AB
JESD-30 Code
R-PDSO-G3
R-PDSO-G3
JESD-609 Code
e3
Moisture Sensitivity Level
1
Non-rep Pk Forward Current-Max
3 A
Number of Elements
2
2
Number of Terminals
3
3
Operating Temperature-Max
150 °C
150 °C
Output Current-Max
0.25 A
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Shape
RECTANGULAR
RECTANGULAR
Package Style
SMALL OUTLINE
SMALL OUTLINE
Peak Reflow Temperature (Cel)
260
Power Dissipation-Max
0.25 W
0.25 W
Qualification Status
Not Qualified
Not Qualified
Rep Pk Reverse Voltage-Max
110 V
110 V
Reverse Current-Max
0.1 µA
Reverse Recovery Time-Max
0.05 µs
0.05 µs
Surface Mount
YES
YES
Technology
AVALANCHE
AVALANCHE
Terminal Finish
TIN
Terminal Form
GULL WING
GULL WING
Terminal Position
DUAL
DUAL
Time@Peak Reflow Temperature-Max (s)
30
Base Number Matches
2
1
Application
GENERAL PURPOSE
Compare BAS31,215 with alternatives
Compare BAS31212 with alternatives