BAS21WS vs BAS21T feature comparison

BAS21WS Taitron Components Inc

Buy Now Datasheet

BAS21T Galaxy Semi-Conductor Co Ltd

Buy Now Datasheet
Rohs Code Yes
Part Life Cycle Code Active Active
Ihs Manufacturer TAITRON COMPONENTS INC GALAXY SEMI-CONDUCTOR CO LTD
Reach Compliance Code unknown unknown
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.70 8541.10.00.70
Application FAST RECOVERY FAST RECOVERY
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type RECTIFIER DIODE RECTIFIER DIODE
Forward Voltage-Max (VF) 1 V 1.25 V
JESD-30 Code R-PDSO-G3 R-PDSO-G3
Non-rep Pk Forward Current-Max 2.5 A 2.5 A
Number of Elements 1 1
Number of Phases 1 1
Number of Terminals 3 3
Operating Temperature-Max 150 °C 150 °C
Operating Temperature-Min -55 °C -65 °C
Output Current-Max 0.2 A 0.2 A
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Cel) NOT SPECIFIED NOT SPECIFIED
Power Dissipation-Max 0.2 W 0.15 W
Rep Pk Reverse Voltage-Max 250 V 250 V
Reverse Current-Max 0.1 µA 0.1 µA
Reverse Recovery Time-Max 0.05 µs 0.05 µs
Surface Mount YES YES
Terminal Form GULL WING GULL WING
Terminal Position DUAL DUAL
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED NOT SPECIFIED
Base Number Matches 1 1
Package Description R-PDSO-G3
Breakdown Voltage-Min 250 V
Reverse Test Voltage 200 V

Compare BAS21WS with alternatives

Compare BAS21T with alternatives