BAS21E6327HTSA1 vs BAS21-V-GS08 feature comparison

BAS21E6327HTSA1 Infineon Technologies AG

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BAS21-V-GS08 Vishay Semiconductors

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Pbfree Code Yes Yes
Rohs Code Yes
Part Life Cycle Code End Of Life Obsolete
Ihs Manufacturer INFINEON TECHNOLOGIES AG VISHAY SEMICONDUCTORS
Part Package Code SOT-23
Package Description R-PDSO-G3 R-PDSO-G3
Pin Count 3 3
Reach Compliance Code compliant unknown
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.70 8541.10.00.70
Factory Lead Time 4 Weeks
Samacsys Manufacturer Infineon
Application GENERAL PURPOSE GENERAL PURPOSE
Breakdown Voltage-Min 250 V
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type RECTIFIER DIODE RECTIFIER DIODE
Forward Voltage-Max (VF) 1.25 V 1 V
JESD-30 Code R-PDSO-G3 R-PDSO-G3
JESD-609 Code e3 e3
Moisture Sensitivity Level 1 1
Non-rep Pk Forward Current-Max 4 A 2.5 A
Number of Elements 1 1
Number of Phases 1 1
Number of Terminals 3 3
Operating Temperature-Max 150 °C 150 °C
Output Current-Max 0.25 A 0.2 A
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Power Dissipation-Max 0.35 W 0.25 W
Qualification Status Not Qualified Not Qualified
Rep Pk Reverse Voltage-Max 200 V 250 V
Reverse Recovery Time-Max 0.05 µs 0.05 µs
Surface Mount YES YES
Terminal Finish Tin (Sn) Matte Tin (Sn)
Terminal Form GULL WING GULL WING
Terminal Position DUAL DUAL
Base Number Matches 1 2
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 30

Compare BAS21E6327HTSA1 with alternatives

Compare BAS21-V-GS08 with alternatives