BAS21E6327
vs
BAS21VD,165
feature comparison
| Part Life Cycle Code |
Transferred
|
Transferred
|
| Ihs Manufacturer |
SIEMENS A G
|
NXP SEMICONDUCTORS
|
| Reach Compliance Code |
unknown
|
compliant
|
| ECCN Code |
EAR99
|
EAR99
|
| Configuration |
SINGLE
|
SEPARATE, 3 ELEMENTS
|
| Diode Element Material |
SILICON
|
SILICON
|
| Diode Type |
RECTIFIER DIODE
|
RECTIFIER DIODE
|
| JESD-30 Code |
R-PDSO-G3
|
R-PDSO-G6
|
| Number of Elements |
1
|
3
|
| Number of Phases |
1
|
|
| Number of Terminals |
3
|
6
|
| Package Body Material |
PLASTIC/EPOXY
|
PLASTIC/EPOXY
|
| Package Shape |
RECTANGULAR
|
RECTANGULAR
|
| Package Style |
SMALL OUTLINE
|
SMALL OUTLINE
|
| Power Dissipation-Max |
0.35 W
|
0.25 W
|
| Qualification Status |
Not Qualified
|
Not Qualified
|
| Reverse Recovery Time-Max |
0.05 µs
|
0.05 µs
|
| Surface Mount |
YES
|
YES
|
| Terminal Form |
GULL WING
|
GULL WING
|
| Terminal Position |
DUAL
|
DUAL
|
| Base Number Matches |
3
|
2
|
| Rohs Code |
|
Yes
|
| Part Package Code |
|
TSOP
|
| Package Description |
|
R-PDSO-G6
|
| Pin Count |
|
6
|
| Manufacturer Package Code |
|
SOT457
|
| HTS Code |
|
8541.10.00.70
|
| Forward Voltage-Max (VF) |
|
1 V
|
| JESD-609 Code |
|
e3
|
| Moisture Sensitivity Level |
|
1
|
| Operating Temperature-Max |
|
150 °C
|
| Operating Temperature-Min |
|
-65 °C
|
| Output Current-Max |
|
0.2 A
|
| Peak Reflow Temperature (Cel) |
|
260
|
| Rep Pk Reverse Voltage-Max |
|
250 V
|
| Reverse Current-Max |
|
100 µA
|
| Reverse Test Voltage |
|
200 V
|
| Terminal Finish |
|
TIN
|
| Time@Peak Reflow Temperature-Max (s) |
|
30
|
|
|
|
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